a d v a n c e d s e m i c o n d u c t o r, i n c. rev. 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 c symbol test conditions minimum typical maximum units bv cbo i c = 1.0 ma 45 v bv cer i c = 1.0 ma r be = 10 ? 45 v i ces v ce = 30 v 0.5 ma bv ebo i e = 1.0 ma 3.5 v h fe v ce = 5 v i c = 100 ma 10 --- p out c p g v ce = 30 v p in = 0.3 w f = 2.7 to 3.1 ghz 1.0 27 5.2 1.1 30 5.6 w % db note: pulse width = 100 s duty cycle = 10% npn rf power transistor AM82731-001 description: the AM82731-001 is a common base device designed for pulsed s- band radar amplifier applications. features include: ? input/output matching ? gold metallization ? emitter ballasting maximum ratings i c 0.45 a v cc 34 v p diss 11.5 w @ t c = 25 c t j -65 c to+250 c t stg -65 c to+200 c jc 13.0 c/w package style 400 2nl flg minimum inches / mm .100 / 2.54 .110 / 2.79 .376 / 9.55 .395 / 10.03 b c d e f g a maximum .396 / 10.06 .407 / 10.34 .130 / 3.30 inches / mm .450 / 11.43 h dim k l i j .640 / 16.26 .890 / 22.61 .004 / 0.10 .660 / 16.76 .910 / 23.11 .007 / 0.18 h f c e n ?d m g 4x .062 x 45 p l k i j 2x b .025 x 45 a n m .118 / 3.00 .131 / 3.33 .020 / 0.51 .030 / 0.76 .193 / 4.90 .125 / 3.18 .395 / 10.03 .415 / 10.54 .072 / 1.83 .052 / 1.32 p .230 / 5.84 1 = collector 2 & 4 = base 3 = emitter
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